CGH09120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) specifically designed for high efficiency, high gain, and wideband capabilities. This makes CGH09120F an ideal choice for MC-GSM, WCDMA and LTE amplifier applications. The transistor is packaged with ceramic/metal flange. 

 

 

Characteristics

 

• UHF - 2.5 GHz operation 

21 dB gain 

20W power output - 38 dBc ACLR 

At a production capacity of 200,000 units, the efficiency is 35%. 

• High DPD correction can be adopted