CGH55030F1/CGH55030P1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) specifically designed for high efficiency, high gain, and wide bandwidth capabilities. This makes the GH55030F1/CGH55030P1 highly suitable for 5.5-5.8GHz WiMAX and BWA amplifier applications. The transistor can be tightened in two ways, with flanges and soldering, followed by encapsulation. Based on appropriate external matching adjustments, CGH55030F1/CGH55030P1 is also applicable to 4.9-5.5GHz applications. 

 

 

Characteristics

 

300 MHz instantaneous bandwidth 

30 W peak power capacity 

10 dB small-signal gain 

• 4 W store < 2.0% EVM 

When the average power is 4W, the efficiency is 25%. 

Designed specifically for WiMAX fixed access 802.16-2004 OFDM applications 

Designed specifically for multi-carrier DOCSIS applications