CGH21120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) specifically designed for high efficiency, high gain, and wideband capabilities. This makes CGH21120F highly suitable for 1.8-2.3GHz WCDMA and LTE amplifier applications. The transistor is packaged with ceramic/metal flange. 

 

 

Characteristics

 

• 1.8 - 2.3 GHz operation 

15 dB gain 

-35 dBc ACLR, 20W surface area 

At a production capacity of 200,000 units, the efficiency is 35%. 

• High DPD correction can be adopted