The CMPA2560025F from Cree is a single-chip microwave integrated circuit (MMIC) based on gallium nitride (GaN) high electron mobility transistors (HEMT). Compared to silicon or gallium arsenide, GaN has higher breakdown voltage, higher saturation electron drift velocity and higher thermal conductivity. Compared to silicon and gallium arsenide transistors, GaN-hemt also has higher power density and wider bandwidth. This MMIC contains a two-stage reactive matching amplifier, enabling a very wide bandwidth to be tightly packaged in a small area with a copper-tungsten heat sink. 

 

 

Characteristics

 

24 dB small-signal gain 

25 W typical PSAT 

• The working voltage can reach up to 28 V. 

High breakdown voltage 

• High-temperature operation 

 

 

Application

 

Ultra-wideband amplifier 

• Fiber optic driver 

• Testing instruments 

• EMC Amplifier