These compact edge-illuminated InGaAs monitor photodiode chips feature a nominal active area of 210 μm x 210 μm and an operating temperature range -40 °C to 90 °C. This simplifies their integration in transceivers, transponders, and other devices.

Key Features

• Large active area - nominally 210 μm x 210 μm

• Operating temperature -40 °C to 90 °C

• Qualified according to GR-468 for use in non-hermetic packages

• Extremely low dark current with high reliability

• Response to 1270-1620nm with typical responsivity of 0.8 A/W at 1310nm

• RoHS compliant