9-10GHz GaN Internally-Matched Power Transistor

Key Features:

• Frequency Range: 9.0 GHz – 10.0 GHz
• Power Gain: 9.0 dB (typ.)
• Output Power: 53.0 dBm (typ.)
• Power Added Efficiency: 39% (typ.)
• Package: Metal Package

Product Introduction:

HXN42019 is a GaN internally matched power transistor operating in the 9.0–10.0 GHz frequency range. It delivers a typical output power of 53.0 dBm and a power gain of 9 dB. Designed for standard communication bands, it provides optimal power and gain performance in 50-ohm systems.

Electrical Parameters (T_A = +25°C):

Typical Curves (T_A = +25°C):

Output Power / PAE vs Frequency, Power Gain vs Frequency.

Physical Parameters:

Package outline drawing (units in mm). Pin assignment: 1—Gate, 2—Source, 3—Drain.

Absolute Maximum Ratings (T_A = +25°C):

Typical Application Circuit:

Circuit diagram (not included in text).

Usage Notes:

1. Power-on sequence: apply gate voltage before drain voltage. Power-off sequence: remove drain voltage before gate voltage.
2. Ensure adequate heat dissipation. High temperature degrades performance and reduces lifespan; lower temperature extends lifespan.
3. This device is ESD-sensitive. Use anti-static measures during handling and storage; ensure equipment is properly grounded.
4. Do not touch device leads.
5. Radiation characteristic: This device is radiation-insensitive.
6. For issues, contact the supplier.