GaN Internally-matched Power Transistor

Product Features:

• Operating Frequency: 9.00–10.00 GHz
• Saturated Output Power: P_sat ≥ 50 dBm
• Power Gain: Gain ≥ 8 dB
• Efficiency: η ≥ 35%
• Port Matching: Z_in/Z_out = 50 Ω

Product Description:

HXN40101 is a gallium nitride (GaN) internally matched power transistor utilizing advanced planar matching synthesis technology and mature thin-film hybrid integration process. Its typical operating frequency band is 9–10 GHz, featuring high power, high efficiency, and good environmental adaptability such as temperature stability. It is widely used in various RF/microwave systems.

Absolute Maximum Ratings (T_C=25°C, not recommended for operation under these conditions):

Microwave Electrical Performance:

Typical Curves:

Performance curves vs. frequency (graphs referenced but not included in text).

Recommended Application Circuit:

DUT: Device Under Test

C1: 1 pF, Rp: 51 Ω

C2: 1000 pF, Rg: 15 Ω

C3: 100 µF, radius ≈ 3.5 mm (Rogers5880, 20 mil)

ESD Class:

Mechanical Outline:

[Outline drawing not included in text]

Usage Notes:

• Keep dry during transportation and storage.
• Use anti-static measures during handling and assembly; wear grounded anti-static wrist strap.
• Apply gate voltage before drain voltage when powering up.