HXCM40006 is an internally matched power amplifier module utilizing advanced planar matching synthesis technology and mature thin-film hybrid integration process. Its typical operating frequency band is 8.5–11 GHz, featuring high gain, high efficiency, and good environmental adaptability such as temperature stability. It is widely used in various RF/microwave systems.
Absolute Maximum Ratings (Tc=25°C, not recommended for operation under these conditions):
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
9
V
Gate-Source Voltage
VGS
-2
V
Storage Temperature
Tstg
-65 to +150
°C
Channel Temperature
Tch
150
°C
Microwave Electrical Performance:
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Drain Current
Idss
VDS=8V, CW, Pin=10.5dBm, Freq=8.5–11GHz
-
0.8
-
A
Saturated Output Power
Psat
34
-
-
dBm
Power Gain
Gp
23.5
-
-
dB
Efficiency
η
-
40
-
%
Gain Flatness
ΔG
-0.8
-
+0.8
dB
Typical Curves:
η vs Frequency (efficiency vs frequency curve shown graphically).
Recommended Application Circuit:
Circuit includes capacitors (10 pF → 0.1 µF) and connections for Vg, Vd, RF In, and RF Out.
ESD Class:
ESD Level
Class III
2000 V
Mechanical Outline:
[Outline drawing not included in text]
Usage Notes:
Keep dry during transportation and storage.
Use anti-static measures during handling and assembly; wear grounded anti-static wrist strap.
Apply gate voltage before drain voltage when powering up.