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PartNo:
CGHV1F025S
Mfg:
MACOM
D/C:
25+
Qty:
350
Packing:
CGHV1F025
Description:
The CGHV1F025S is an unmatched; gallium-nitride (GaN); high-electron-mobility transistor (HEMT)  designed specifically for high-efficiency; high-gain and wide-bandwidth capabilities. The device can be deployed for L; S; C; X and Ku-band amplifier applications. The data sheet specifications are based on an X-Band (8.9 – 9.6-GHz) amplifier. The CGHV1F025S operates on a 40-volt rail circuit while housed in a 3-mm x 4-mm; surface-mount; dual-flat-no-lead (DFN) package. Under reduced power; the transistor can operate below 40-V to as low as 20-V VDD; maintaining high gain and efficiency.
 
Product Specifications:
Part Number:CGHV1F025
Description:25 W; DC - 15 GHz; 40 V; GaN HEMT
Min Frequency(MHz):0
Max Frequency(MHz):15000
Gain(dB):11
Package Category:Surface Mount
 
Features:
Up to 15 GHz Operation
25 W Typical Output Power
11 dB Gain at 9.4 GHz
Up to 15 GHz Operation
 
Applications
L, S, C, X and Ku-Band Amplifiers 
 
We also supply below:
CGH60030D，CGH60060D，CGH60120D,CGHV1J006D，CGHV1J025D，CGHV1J070D，CGHV27320T1AD，CGHV40320D，CGHV40320D5，CGHV40320T1AD，CGHV60015T1D，CGHV60018D5，CGHV60030D5，CGHV60030T1D，CGHV60035D5，CGHV60040D，CGHV60060D5，CGHV60080D5，CGHV60080D7，CGHV60080T1AD，CGHV60100D，CGHV60120D5，CGHV60120D7，CGHV60120T1AD
 

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