Language: English
PrevNext

Products
PartNo:
HXN20043-AHR
Mfg:
HXN20043-AHR
D/C:
Qty:
Packing:
Description:

HXN20043-AHR

7-12 GHz Power Amplifier (packaged)

Key Indicators:

  • Frequency: 7–12 GHz
  • Small Signal Gain: 32 dB (Typ.)
  • Power Gain: 23 dB (Typ.)
  • Output Power: 46 dBm (Typ.)
  • Added Efficiency: 42% @7–10GHz, 37% @10–12GHz (Typ.)
  • Supply Voltage: 28 V, -2.2 V
  • Dimension: 18.03 mm × 8.7 mm × 2.5 mm
  • Applications: Microwave transceiver components, wireless communication, etc.

Product Introduction:

HXN20043-AHR is a 7–12GHz high-power amplifier with excellent performance, manufactured using a GaN high electron mobility transistor (HEMT) process with a gate length of 0.25µm. It operates with dual power supplies, with drain voltage Vds=28V, and can provide 46.5dBm output power within 7–12GHz.

Absolute Maximum Ratings:

Symbol Parameter Value Note
Vd Drain Voltage 35 V  
Id Drain Current 7 A  
Vg Gate Voltage -1.2 V  
Ig Gate Current 150 mA  
Pd DC Power Dissipation 196 W  
Pin Input Signal Power 30 dBm  
Tch Channel Temperature 225 °C  
Tm Sintering Temperature 310 °C 30s Nā‚‚ Protect

Note: Exceeding any of these limits can cause permanent damage.

Electrical Specifications (TA=25°C):

Symbol Parameter Test Conditions Min Typ Max Units
Gain Small-signal Gain Vd=28V, Vg=-2.2V, Duty Cycle: 10% - 32 - dB
Gp Power Gain Vd=28V, Vg=-2.2V, Duty Cycle: 10% - 23 - dB
Psat Saturated Output Power Vd=28V, Vg=-2.2V, Duty Cycle: 10% - 46 - dBm
PAE Power Added Efficiency Vd=28V, Vg=-2.2V, Duty Cycle: 10% - 40 - %
Id Drain Current Vd=28V, Vg=-2.2V, Duty Cycle: 10% - 0.5 - A

Typical Performance Graphs:

Includes: Gate Current, Second Harmonic Rejection Ratio, Near Spurious, and Far Spurious vs. Frequency.

Dimensions (mm):

Symbol Min Typ Max
H (Height) - 2.24 2.50
L (Length) 17.83 18.03 18.23
W (Width) 8.50 8.70 8.90

Pin Diagram:

Pin Function Pin Function
1 Gate (Vg) 4 Drain (Vd)
2 RF Input (RFin) 5 RF Output (RFout)
3 Gate (Vg) 6 Drain (Vd)

Recommended Capacitors:

Identification Number Recommended Capacitance
C1 10 µF
C2 1 µF
C3 1000 pF

Usage Notes:

  1. Use transmission line structure for RF input and output terminals as shown in diagram.
  2. Apply recommended working voltages during power-on.
  3. For continuous wave operation, install a µF-level filter capacitor at Vd port.
  4. If using a voltage regulator, ensure its overcurrent capability exceeds module's recommended working current.
  5. Power-on sequence: apply negative (gate) voltage before positive (drain) voltage.
  6. Implement current limiting protection.
  7. Ensure good grounding.
  8. Take effective anti-static measures during use, storage, and transportation.
  9. Operate strictly within recommended temperature range.
  10. If product fails, return to original manufacturer for repair; do not open cover.

News Center

Contact Us

Superb Automation Co., Limited

Website:www.superb-tech.com

For 25 years your reliable partner in Electronics & PCBA!

HK number: 852 4459 0634

Email :Info@superb-tech.com

Whatsapp:8613396081443