5-12GHz GaN Power Amplifier

Key Technical Parameters (Typical):

• Frequency: 5–12 GHz
• Small Signal Gain: 27 dB
• Output Power: 46 dBm @ 28V
• Added Efficiency: 30%
• Process: 0.25μm GaN HEMT
• Bias: 28 V, -1.8V (Typ.) CW
• Dimensions: 18.03 mm × 8.7 mm × 2.5 mm

Product Introduction:

HXN20012-A is a 5–12GHz high-power amplifier with excellent performance, manufactured using a 0.25μm gate-length gallium nitride high electron mobility transistor (HEMT) process. It operates with dual power supplies, and the drain voltage Vds=28V can provide an output power of 46dBm within 5–12GHz. This chip is mainly used in transceiver components, wireless communications, etc.

Absolute Maximum Ratings (TA=25°C) *

* Exceeding any of these limits can cause permanent damage.

Electrical Characteristic Parameters (TA=25°C):

Typical Performance:

Graphs included for Small Signal Gain, Input Standing Wave, Output Power, Drain Current, Power Added Efficiency, and Heat Capacity vs. Frequency.

Dimensions (unit: mm):

Pin Definition:

Recommended Capacitors:

Usage Notes:

1. RF input and output terminals must use the transmission line structure as shown in the diagram.
2. During power-on, apply recommended working voltages as per manual.
3. For CW operation, install a μF-level filter capacitor near the Vd port.
4. If using a voltage regulator, ensure its overcurrent capacity exceeds the module's recommended operating current.
5. Power-on sequence: apply negative (gate) voltage before positive (drain) voltage.
6. Implement current limiting protection.
7. Ensure good grounding.
8. Take effective anti-static measures during use, storage, and transportation.
9. Operate strictly within recommended temperature range.
10. If product fails, return to original manufacturer for repair; do not open cover.