9.0-10.0 GHz GaN Internally-matched Power Transistor

Features

• Frequency Range: 9.0-10.0 GHz
• Power Gain: 9 dB
• Output Power: 55 dBm
• Power Added Efficiency: 40%

Description

Utilizing GaN HMET die. Operating frequency covers 9.0 GHz to 10.0 GHz, typical output power 55 dBm, power gain 9 dB. It is an internally matched power transistor designed for standard communication bands, providing optimal power and gain performance in a 50-ohm system.

Electrical Parameters (TA = +25°C)

Typical Curves (TA = +25°C)

Output Power / PAE vs. Frequency

Power Gain vs. Frequency

Physical Parameters

Package Outline Drawing (Units: mm)

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Absolute Maximum Ratings (TA = +25°C)

Typical Application Circuit

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Precautions

1. Power ON sequence: Apply gate voltage first, then drain voltage. Power OFF sequence: Remove drain voltage first, then gate voltage.
2. Ensure adequate heat dissipation during operation. Excessive temperature may degrade performance and reduce lifetime.
3. This product is ESD sensitive. Take appropriate ESD precautions during storage and handling. Ensure instruments and equipment are properly grounded.
4. Do not touch the device leads.
5. Radiation Sensitivity: This device is not radiation sensitive.
6. For any issues, please contact your supplier.