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GaN Radio Frequency Power Transistor (2.0GHz~6.0GHz 45dBm)

GaN Radio Frequency Power Transistor (2.0GHz~6.0GHz 45dBm)

 

GaN Radio Frequency Power Transistor (2.0GHz~6.0GHz 45dBm)

Product Introduction

A high-power internally matched GaN transistor manufactured with fully localized materials and processes. Operates at 2.0–6.0 GHz, delivering optimal power and gain performance in 50 Ω systems under CW (Continuous Wave) saturated power conditions.

Functional Block Diagram

VGs 4 VDS | RFin 2 5 RFout | VGs 3 6 VDS

Pin Definition: Missing angle for signal output | Built-in DC isolation for input and output

Performance Characteristics

  • Frequency range: 2.0GHz~6.0GHz
  • 50 Ω impedance matching for easy circuit cascading
  • Typical operating voltage: 28 V
  • 100% RF Testing
  • Excellent Thermal Stability

Application Field

Microwave transceiver components | Solid-state transmitters

Typical Performance (TA=+25°C)

Test Conditions: VDS=28 V, IDQ=1.3 A, CW, Pin=26 dBm | Reference only (based on typical application circuit test data)

Operating Frequency (GHz) Output Power (dBm) Drain Efficiency (%) Power Gain (dB)
2.0 45.11 39.11 19.11
2.2 45.45 43.93 19.45
2.4 45.35 42.73 19.35
2.6 45.45 37.71 19.45
2.8 45.29 36.95 19.29
3.0 45.03 37.91 19.03
3.2 44.98 35.97 18.98
3.4 45.68 39.66 19.68
3.6 46.28 44.87 20.28
3.8 46.47 48.70 20.47
4.0 46.32 48.72 20.32
4.2 46.29 47.70 20.29
4.4 46.16 47.12 20.16
4.6 46.14 47.77 20.14
4.8 45.84 45.27 19.84
5.0 45.83 45.23 19.83
5.2 45.52 41.76 19.52
5.4 45.78 41.61 19.78
5.6 45.83 40.29 19.83
5.8 45.83 40.84 19.83
6.0 45.51 39.82 19.51

Electrical Parameters

Parameter Symbol Value Unit
Drain-source breakdown voltage VDS 90 V
Gate-source voltage VGS -10 ~ +2 V
Drain-source voltage VDS 0 ~ +30 V
Maximum forward gate current IGMAX 10.4 mA
Storage temperature TSTG -65 ~ +150 ℃
Channel temperature TCH 225 ℃

Thermal Properties

Parameter Symbol Value Unit
Thermal resistance (CW) Rthjc TBD ℃/W

Electrical Performance (TA=25°C)

Parameter Symbol Minimum Typical Maximum Unit
Drain-source leakage current (VGS=-10V, VDS=90V) IDSS     10.4 mA
Drain-source breakdown voltage (VGS=-10V, ID=10.4mA) V(BR)DSS 90     V
Gate threshold voltage (VDS=28V, ID=10.4mA) VGS(TH) -4.0 -2.8 -1.0 V
Static gate bias voltage (VDS=28V, ID=1300mA) VGS(Q)   -2.6   V

DC Characteristics

Parameter Symbol Minimum Typical Maximum Unit
Peak Output Power Psat   TBD   dBm
Drain Efficiency ηD   TBD   %
Power Gain GP   TBD   dB

RF Performance (6000 MHz Typical)

Test Fixture: Mass production test fixture | Test Conditions: VDS=28V, IDQ=1.3A, CW

Load Adaptability

Parameter Result
VSWR 5:1 (VDS=28V, 30W pulse power output, CW) TBD

Packaging Information

Packaging Type

Views: Front | Right | Top

Pin Configuration: 4XR2 4XR3 6xb 2xb14Xb2 6XL | 2XR1 | E1 E | D1

Package Dimensions

Item Inch Millimeter
  Min Typ Max Min Typ Max

Moisture Sensitivity Level

Test Method Rating
Moisture Sensitivity Level (per J-STD-020) TBD

Abbreviations

Abbreviation Description
GaN Gallium Nitride
VSWR Voltage Standing Wave Ratio
TBD To Be Determined
CW Continuous Wave

Contact Us

Superb Automation Co., Limited

Website:www.superb-tech.com

For 25 years your reliable partner in Electronics & PCBA!

HK number: 85260404363

Email :Info@superb-tech.com

Whatsapp:8613396081443