HXNM40012 8-12GHz GaN Internally-matched Power Amplifier Module

Product Features

• Operating Frequency: 8~12GHz
• Saturated Output Power: \(P_{sat} ≥ 42 dBm\)
• Power Gain: \(Gain ≥ 20 dB\)
• Operating Efficiency: \(\eta = 30\%\) (typ)
• Port Matching: \(Z_{in} / Z_{out} = 50 \Omega\)

Product Description

HXNM40012 is a GaN internally-matched power amplifier module. It adopts advanced in-plane matching synthesis technology and mature thin-film hybrid integration process. The typical operating frequency band of the product is 8~12GHz, featuring high power, high efficiency and environmental adaptability such as temperature resistance. It can be widely used in various RF/microwave systems.

Maximum Ratings (\(T_{C} = 25^{\circ} C\), Operation not recommended under these conditions)

Microwave Electrical Performance

Typical Curves

- P sat vs Freq (Frequency range: 8~12GHz, P sat range: 42.2~42.8 dBm)

- η vs Freq (Frequency range: 8~12GHz, η range: 30~34%)

Recommended Application Circuit

Components: 10f, 0.1uf, 0.1uf, 10mf

Connections: Vg, Vd, RFin, RFout (Dual-channel configuration with duplicate Vg, Vd, RFin, RFout ports)

ESD Rating

Physical Dimensions

Dimensions: 1.08-20 000-±0.15; 4-8010; 4-R1 0.50 0.10; W 2-d2.30

Usage Notes

• Keep dry during transportation and storage.
• Pay attention to ESD protection during chip use and assembly; wear a grounded ESD wristband.
• When powering on, apply gate voltage first, then drain voltage.