Applications: Microwave transceiver components, wireless communication, etc.
Product Introduction:
HXN20043-F1HR is a 7–12GHz high-power amplifier with excellent performance, manufactured using a GaN high electron mobility transistor (HEMT) process with a gate length of 0.25µm. It operates with dual power supplies, with drain voltage Vds=28V, and can provide 46dBm output power within 7–12GHz.
Absolute Maximum Ratings:
Symbol
Parameter
Value
Note
Vd
Drain Voltage
35 V
Id
Drain Current
7 A
Vg
Gate Voltage
-1.2 V
Ig
Gate Current
150 mA
Pd
DC Power Dissipation
196 W
Pin
Input Signal Power
30 dBm
Tch
Channel Temperature
225 °C
Tm
Sintering Temperature
310 °C
30s Nā Protect
Note: Exceeding any of these limits can cause permanent damage.
Electrical Specifications (TA=25°C):
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Gain
Small-signal Gain
Vd=28V, Vg=-2.2V, Duty Cycle: 10%
-
32
-
dB
Gp
Power Gain
Vd=28V, Vg=-2.2V, Duty Cycle: 10%
-
23
-
dB
Psat
Saturated Output Power
Vd=28V, Vg=-2.2V, Duty Cycle: 10%
-
46
-
dBm
PAE
Power Added Efficiency
Vd=28V, Vg=-2.2V, Duty Cycle: 10%
-
40
-
%
Id
Drain Current
Vd=28V, Vg=-2.2V, Duty Cycle: 10%
-
0.5
-
A
Typical Performance Graphs:
Includes: Linear Gain, Drain Current (Duty Cycle: 10%), Output Power, Efficiency, Gate Current, Second Harmonic Rejection Ratio, Near Spurious, and Far Spurious vs. Frequency.