8.5-9.6 GHz GaAs Internally-matched Power Transistor

Product Features:

• Frequency Range: 8.50–9.60 GHz
• 1dB Output Power: Pt/dB ≥ 39 dBm
• Power Gain: Gain ≥ 8.0 dB
• Efficiency: η ≥ 30%
• Port Matching: Zin/Zout = 50 Ω

Product Description:

The HXC40036 is an internally-matched power transistor using advanced planar matching synthesis and mature thin-film hybrid integration technology. It operates typically from 8.5 to 9.6 GHz, offering high power, high efficiency, and good environmental adaptability. Suitable for various RF/microwave systems.

Absolute Maximum Ratings (TC = 25°C, not recommended for operation):

Parameter	Symbol	Value	Unit
Drain-Source Voltage	VDS	11	V
Gate-Source Voltage	VGS	-5	V
Storage Temperature	Tstg	-65 to +150	°C
Channel Temperature	Tch	150	°C

Microwave Performance:

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Drain Current	Idss	Vds = 10V	-	2.6	-	A
1dB Output Power	Pt/dB	CW operation	39	-	-	dBm
Power Gain	Gp	Pin = 31 dBm	8	-	-	dB
Efficiency	η	Freq: 8.5–9.6 GHz	30	-	-	%
Gain Flatness	ΔG		-0.8	-	0.8	dB

Typical Curves

P1dB vs. Frequency, Efficiency vs. Frequency, Gain vs. Frequency (at 25°C, 55°C, -40°C).

HXC40036 – Recommended Application Circuit:

DUT: Device Under Test

• C1: 1 pF
• Rp: 51 Ω
• C2: 1000 pF
• Rg: 15 Ω
• C3: 100 µF
• Radius ≈ 3.5 mm (Rogers5880, 20mil)

ESD Rating:

ESD	Class III	2000 V

Usage Notes:

• Keep dry during storage and transportation.
• Use anti-static measures during handling and assembly (e.g., grounded wrist strap).
• Apply gate voltage before drain voltage when powering on.