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PartNo:
CGHV96100
Mfg:
Macom
D/C:
25+
Qty:
350
Packing:
Description:

 CGHV96100F2 100 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output-Matched; GaN HEMT Power Amplifier

The CGHV96100F2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on silicon-carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.

Product Description Min Frequency(MHz) Max Frequency(MHz) Gain(dB) Output P1dB(dBm) PSAT(dBm) OIP3(dBm) Bias Current(mA) NF(dB) Package
CGHV14250 250 W; DC - 1600 MHz; GaN HEMT for L - Band Radar Systems 0 1600 18            
CGHV14500 500 W; 1200 - 1400 MHz; GaN HEMT for L - Band Radar Systems 1200 1400 16            
CGHV14800 850 W; 1200 - 1400 MHz; GaN HEMT for L - Band Radar Systems 1200 1400 16            
CGHV1A250 8.8 - 9.6 GHz, 250 W, 45 V, Packaged GaN Transistor 8800 9600 12            
CGHV1F006 6 W; DC - 15.0 GHz; 40 V; GaN HEMT 0 15000 7            
CGHV1F025 25 W; DC - 15 GHz; 40 V; GaN HEMT 0 15000 11            
CGHV1J006D-GP4 6 W; 18.0 GHz; GaN HEMT Die 0 18000 17            
CGHV1J025D-GP4 25 W; 18.0 GHz; GaN HEMT Die 0 18000 17            
CGHV1J070D-GP4 70 W; 18.0 GHz; GaN HEMT Die 0 18000 17            
CGHV27015S 15 W; DC - 6.0 GHz; 50 V; GaN HEMT 0 6000 21            
CGHV27030 30 W; DC - 6.0 GHz; GaN HEMT 0 6000 21            
CGHV27060 60 W; DC to 2700 MHz; 50 V; GaN HEMT for LTE and Pulse-Radar Applications 0 2700 16.5            
CGHV31500 500W, 2.7 - 3.1 GHz, GaN IMFET 2700 3100 12.7            
CGHV35060MP 60 W; 2700 to 3800 MHz; 50 V; GaN HEMT for S-Band Radar and LTE Base Stations 2700 3800 14.5            
CGHV35120F 120 W; 2.9 - 3.8 GHz; 50 V; GaN HEMT for S-Band Radar Systems 3100 3500 12.8            
CGHV35150 150 W; 2900 - 3500 MHz; 50 V; GaN HEMT for S-Band Radar Systems 2900 3500 13.5            
CGHV35400 400 W; 2900 - 3500 MHz; 50 ohm Input/Output Matched; GaN HEMT for S-Band Radar Systems 2900 3500 11            
CGHV37400F 400 W; 3300 - 3700 MHz; 50 ohm Input/Output Matched; GaN HEMT for S-Band Radar Systems 3300 3700 14            
CGHV38375F 2.75 - 3.75, 400W GaN on SiC HPA 2750 3750 9            
CGHV40030 30 W; DC - 6 GHz; 50 V; GaN HEMT 0 6000 16            
CGHV40050 50 W; DC - 4.0 GHz; 50 V; GaN HEMT 0 4000 16            
CGHV40100 100 W; DC CGHV40100 3 GHz; 50 V; GaN HEMT 0 3000 17.5            
CGHV40180 180 W; DC - 2 GHz; GaN HEMT 0 2000 24            
CGHV40200 200 W RF Power GaN HEMT 0 3000 21            
CGHV40320D-GP4 320 W; 4.0 GHz; GaN HEMT Die 0 4000 19            
CGHV50200 200 W; 4400 - 5000 MHz; 50 ohm Input/Output-Matched; GaN HEMT 4400 5000 11.5            
CGHV59070 70 W; 4500 to 5900 MHz; internally matched GaN HEMT for C-Band Radar Systems 4500 5900 12            
CGHV59350 350 W; 5200 to 5900 MHz; 50 ohm Input/Output-Matched; GaN HEMT 5200 5900 11            
CGHV60040D-GP4 40 W; 6.0 GHz; GaN HEMT Die 0 6000              
CGHV60075D5-GP4 75 W; 6.0 GHz; GaN HEMT Die 0 6000 7            
CGHV60170D-GP4 170 W; 6.0 GHz; 50 V GaN HEMT Die 0 6000 17            
CGHV96050F1 50 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output Matched GaN HEMT 7900 8400 13            
CGHV96050F2 50 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output-Matched GaN HEMT 7900 9600 10            
CGHV96100 100 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output-Matched; GaN HEMT Power Amplifier 7900 9600 10            
CGHV96130F 130 W; 8.4 - 9.6 GHz; 50 ohm; Input/Output Matched GaN HEMT for X-Band Radar Applications 8400 9600 12.2            

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