CG2H30070F belongs to the RF FETs, MOSFETs class crafted by MACOM Technology Solutions. Engineered to serve a wide range of applications including satellite and terrestrial communication systems, radar, and electronic warfare systems. This high-performance RF MOSFET GaN HEMT is designed for operation up to 4GHz, offering a gain of 12dB and a voltage rating of 28V. This device extends its utility to various applications such as microwave amplifiers, low noise amplifiers, and power amplifiers. It showcases major benefits like high efficiency, low noise figure, and high output power. While also addressing crucial precautions like proper thermal management and electrical handling. Let me know if you need anything else!

 

 

Features

High-power RF MOSFET GaN HEMT technology

Operating frequency up to 4GHz

Gain of 12dB

Voltage rating of 28V

Current rating (Amps) unknown

Noise figure unknown

High efficiency and output power

Available in a 440224 package

Application

Microwave amplifiers

Low noise amplifiers

Power amplifiers

Satellite communication systems

Terrestrial communication systems

Radar applications

Electronic warfare systems

Specifications

Parameter Value Parameter Value

Manufacturer: Wolfspeed Shipping Restrictions: This product may require additional documentation to export from the United States.

Transistor Type: HEMT Technology: GaN

Operating Frequency: 0.5 GHz to 3 GHz Gain: 12.4 dB

Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 120 V

Vgs - Gate-Source Breakdown Voltage: - 10 V, 2 V Id - Continuous Drain Current: 12 A

Output Power: 70 W Maximum Drain Gate Voltage: -

Minimum Operating Temperature: - 40 C Maximum Operating Temperature: + 150 C

Pd - Power Dissipation: - Mounting Style: Screw Mount

Packaging: Tray Brand: Wolfspeed

Development Kit: CG2H30070F-TB1 Forward Transconductance - Min: -

Factory Pack Quantity: 1 Vgs th - Gate-Source Threshold Voltage: - 3.8 V

Unit Weight: 0.369167 oz Base Product Number CG2H30070